DS2001IBDG1A  |  绝缘栅双极晶体管  |   用于控制和调节电流

型号：DS2001IBDG1A

类别：绝缘栅双极晶体管

成色：全新，非全新

质保；一年

品牌：GE

品描述

DS2001IBDG1A GE绝缘栅双极晶体管(IGBT)板是一种晶体管技术，用于控制和调节电流。

工作原理

DS2001IBDG1A IGBT的工作原理可以概括为通过控制绝缘栅极的电压来实现晶体管的导通和关断。具体过程如下：

关断状态：当绝缘栅极上的电压为零时，IGBT处于关断状态，此时晶体管不导通电流。

导通状态：当给绝缘栅极施加一个合适的电压（大于阈值电压）时，绝缘栅形成电场，导致PN结附近的N+型区域中的电子向P型区域注入，从而激活PNP型双极晶体管的发射区，形成电流。

关断过程：当绝缘栅极的电压降低到特定阈值以下时，原先激活的PNP型双极晶体管逐渐停止导通，电流停止流动，IGBT进入关断过程。

结构特点

IGBT的结构特点包括以下几个方面：

PNP-NPN结构：IGBT内部由PNP型和NPN型晶体管复合而成，这种结构使其既具有BJT的高电流密度特性，又具有MOSFET的快速开关速度。

隔离绝缘栅：在绝缘栅区域上覆盖了一个绝缘栅氧化层，用于隔离控制极和导电层，阻止电流的注入。这使得IGBT具有更大的输入电阻和更好的电流控制特性。

特征

高速数据传输

坚固耐用的结构

易于安装和维护

与GE系统的兼容性

DS2001IBDG1A GE绝缘栅双极晶体管(IGBT)板是一种用于电力转换和控制应用的高可靠性组件。

DS2001IBDG1A GE绝缘栅双极晶体管(IGBT)板是一种高性能电力电子元件，用于控制和开关不同电压和电流的电力设备。

应用领域

DS2001IBDG1A GE绝缘栅双极晶体管(IGBT)板广泛应用于工业自动化，交通运输，可再生能源等领域.

Model: DS2001IBDG1A

Category: insulated gate bipolar transistor

Finish: New, not new

Warranty; A year

Brand: GE

Product Description

The DS2001IBDG1A GE insulated gate bipolar transistor (IGBT) board is a transistor technology used to control and regulate current.

Working principle

The working principle of the DS2001IBDG1A IGBT can be summarized as that the transistor is switched on and off by controlling the voltage of the insulated gate. The specific process is as follows:

Off state: When the voltage on the insulated gate is zero, the IGBT is in the off state, and the transistor does not conduct current.

On-state: When a suitable voltage (greater than the threshold voltage) is applied to the insulated gate, the insulated gate forms an electric field, resulting in the injection of electrons in the N+ type region near the PN junction into the P-type region, thus activating the emission region of the PNP type bipolar transistor and forming a current.

Turn-off process: When the voltage of the insulated gate is reduced below a specific threshold, the originally activated PNP bipolar transistor gradually stops conducting, the current stops flowing, and the IGBT enters the turn-off process.

Structural characteristics

IGBT structure features include the following aspects:

Pnp-npn structure: IGBT is composed of PNP type and NPN type transistors, which makes it have both the high current density characteristics of BJT and the fast switching speed of MOSFET.

Isolation gate: An insulation gate oxide layer is covered on the insulation gate area to isolate the control pole and the conductive layer to prevent the injection of current. This allows IGBTs to have larger input resistance and better current control characteristics.

trait

High speed data transmission

Strong and durable construction

Easy to install and maintain

Compatibility with GE system

The DS2001IBDG1A GE insulated gate bipolar transistor (IGBT) board is a highly reliable component for power conversion and control applications.

The DS2001IBDG1A GE insulated gate bipolar transistor (IGBT) board is a high-performance power electronic component used to control and switch power devices with different voltages and currents.

Application field

DS2001IBDG1A GE insulated gate bipolar transistor (IGBT) board is widely used in industrial automation, transportation, renewable energy and other fields.