晶闸管 5SHY5055L0002-3BHE019719R0101 实现电力调节

5SHY5055L0002-3BHE019719R0101-GVC736BE101可控硅（Silicon Controlled Rectifier）是一种半导体器件，也称为晶闸管。它具有可控的单向导电性，可以实现电力调节和控制的功能。可控硅由 PNPN 四层半导体结构组成，具有三个电极：阳极（A）、阴极（K）和门极（G）。

5SHY5055L0002-3BHE019719R0101-GVC736BE101可控硅的工作原理是基于半导体的 PN 结特性。当门极接收一个正向电压信号时，会在 PNPN 结构中形成一个触发电流，从而使可控硅从关断状态转换为导通状态。一旦可控硅导通，电流可以在阳极和阴极之间流动，直到电流降至零或门极电压被移除，可控硅才会恢复到关断状态。

5SHY5055L0002-3BHE019719R0101-GVC736BE101可控硅广泛应用于电力电子领域，如交流调压、电动机控制、灯光控制、电源逆变器等。它具有控制功率大、效率高、响应速度快、可靠性高等优点，是电力电子技术中重要的控制器件之一。

保修期: 12个月

包装: 原包装用纸箱

交货时间: 付款后3天内发货

晶闸管 5SHY5055L0002-3BHE019719R0101 实现电力调节

5SHY5055L0002-3BHE019719R0101-GVC736BE101 Silicon Controlled Rectifier is a semiconductor device, also known as a thyristor. It has controllable unidirectional conductivity, which can realize the function of power regulation and control. The thyristor consists of A PNPN four-layer semiconductor structure with three electrodes: anode (A), cathode (K), and gate (G).

The working principle of 5SHY5055L0002-3BHE019719R0101-GVC736BE101 thyristor is based on the PN junction characteristics of the semiconductor. When the gate receives a forward voltage signal, a trigger current is formed in the PNPN structure, which converts the thyristor from the off state to the on-state. Once the thyristor is switched on, the current can flow between the anode and cathode until the current drops to zero or the gate voltage is removed, and the thyristor will not return to the off state.

5SHY5055L0002-3BHE019719R0101-GVC736BE101 thyristor is widely used in the field of power electronics, such as AC voltage regulation, motor control, light control, power inverter and so on. It has the advantages of large control power, high efficiency, fast response speed and high reliability, and is one of the important control devices in power electronics technology.

Warranty period: 12 months

Packing: Original carton

Delivery time: Delivery within 3 days after payment