5SHY4045L0001 集成门极换流晶闸管

5SHY4045L0001 3BHB018162R0001集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成

套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功

半导体开关器件,具有晶闸管的通态特性及晶体管的开关特性。5SHY4045L0001 3BHB018162R0001由于采用了缓冲结构以及浅层发射极技术,

因而使动态损耗降低了约50%，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态

压降、高阻断电压和晶体管稳定的开关特性有机结合.

5SHY4045L0001 3BHB018162R0001 Integrated Gate Commutated Thyristors (IGCT) was introduced in 1996 for use in giant power electronics systems

A new type of power semiconductor device in the package. IGCT is a new type of high-power device based on GTO structure, utilizing integrated gate structure for gate hard drive, buffer layer structure, and anode transparent emitter technology

Semiconductor switching devices have the on state characteristics of thyristors and the switching characteristics of transistors. Due to the use of buffer structure and shallow emitter technology, 5SHY4045L0001 3BHB018162R0001,

As a result, the dynamic loss is reduced by about 50%. In addition, this type of device integrates a freewheeling diode with good dynamic characteristics on a chip, thus achieving the low-pass state of the thyristor in its unique way

The organic combination of voltage drop, high blocking voltage, and transistor stable switching characteristics