5SHY3545L0016 IGCT模块

IGCT与GTO相似，也是四层二端器件, GCT内部由成千个GCT组成，阳极和门极共用，而阴极并联在一起。与GTO有重要差别的是IGCT阳极内侧多

了缓冲层，以透明(可穿透)阳极代替GTO的短路阳极。导通机理与GTO完全-样,但关断机理与GTO完全不同,在IGCT的关断过程中，GCT能瞬

间从导通转到阻断状态，变成一个pnp晶体管以后再关断， 所以它无外加du/dt限制;而GTO必须经过一个既非导通又非关断的中间不稳定状态进行

转换(即”GTO区" ) ,所以GTO需要很大的吸收电路来抑制重加电压的变化率du/dt。阻断状态下IGCT的等效电路可认为是-个基极开路、 低增

益pnp晶体管与栅极电源的串联。

IGCT, similar to GTO, is also a four layer two terminal device. The GCT is composed of thousands of GCTs internally, with the anode and gate shared, and the cathode connected in parallel. The important difference from GTO is that IGCT has more inner anodes

A buffer layer was added to replace the short-circuit anode of GTO with a transparent (permeable) anode. The conduction mechanism is completely similar to GTO, but the shutdown mechanism is completely different from GTO. During the shutdown process of IGCT, GCT can instantly

From conducting to blocking state, it becomes a pnp transistor and then turns it off, so it has no additional du/dt limit; And GTO must go through an intermediate unstable state that is neither on nor off

Conversion (i.e. "GTO region"), therefore GTO requires a large absorption circuit to suppress the rate of change of the re applied voltage du/dt. The equivalent circuit of IGCT in the blocking state can be considered as a base open circuit, low increase

The series connection between the Yipnp transistor and the gate power supply.