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5SHY3545L0010 集成栅极换流晶闸管

可控硅(Silicon Controlled Recfier) 简称SCR,是一种大功率电器元件,也称晶闸管。它具有体积小、效率高、寿命长等优点。在自动控制系统中,可作为大功率驱动器件,实现用小功率控件控制大功率设备。它在交直流电机调速系统、调功系统及随动系统中得到了广泛的应用。

  可控硅分单向可控硅和双向可控硅两种。双向可控硅也叫三端双向可控硅,简称TRIAC。双向可控硅在结构上相当于两个单向可控硅反向连接,这种可控硅具有双向导通功能。其通断状态由控制极G决定。在控制极G上加正脉冲(或负脉冲)可使其正向(或反向)导通。这种装置的优点是控制电路简单,没有反向耐压问题,因此特别适合做交流无触点开关使用。


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产品详情

IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展,给电力电子成套装置带来了新的飞跃。

5SHY4045L0001 3BHB018162R0001是将GTO芯片与反并联二极管和栅极驱动电路集成在一起,再与其栅极驱动器在外围以低电感方式连接,结合

了晶体管的稳定关断能力和晶闸管低通态损耗的优点,在导通阶段发挥晶闸管的性能,关断阶段呈现晶体管的特性。5SHY4045L0001

3BHB0181 62R0001具有电流大、电压高、开关频率高、可靠性高、 结构紧凑、损耗低等特点,而且造成本低,成品率高,有很好的应用前景。

5SHY4045L0001 3BHB018162R0001采用晶闸管技术的GTO是常用的大功率开关器件,它相对于采用晶体管技术的IGBT在截止电压上有更的性

能,但广泛应用的标准GTO驱动技术造成不均匀的开通和关断过程,需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元,因而造成可靠

性下降,价格较高,也不利于串联。5SHY4045L0001 3BHB018162R0001但是, 在大功率MCT技术尚未成熟以前,IGCT已经成为高压大功率低频

交流器的优选方案。

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IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing a new leap to power electronic complete sets of devices.

5SHY4045L0001 3BHB018162R0001 integrates a GTO chip with an anti parallel diode and gate driver circuit, and then connects it with its gate driver in a low inductance manner on the periphery

By utilizing the stable turn-off ability of transistors and the advantages of low on state losses of thyristors, the performance of thyristors is utilized during the conduction phase, while the turn-off phase exhibits the characteristics of transistors. 5SHY4045L0001

3BHB0181 62R0001 has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low losses, and low manufacturing cost, high yield, and has good application prospects.

5SHY4045L0001 3BHB018162R0001 GTO with thyristor technology is a commonly used high-power switching device, which has better cutoff voltage than IGBT with transistor technology

Yes, but the widely used standard GTO driving technology causes uneven turn-on and turn-off processes, requiring costly dv/dt and di/dt absorption circuits and high-power gate drive units, resulting in reliability

The decrease in sex and higher prices are not conducive to series connection. 5SHY4045L0001 3BHB018162R0001 However, before the high-power MCT technology was mature, IGCT had become a high-voltage high-power low-frequency device

The preferred solution for the AC converter.


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