5SHX2645L0002 直流调速中压板

IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起， 再与其门极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。

己用于电力系统电网装置(100MVA) 和的中功率I业驱动装置(5MW)IGCT在中压度频器领域内成功的应用了11年的时间(到09年为止),由于IGCT的高速开关能力无需缓冲电路,因而所需的功率元件数目更少,

运行的可靠性大大增高。IGCT集 IGBT (绝缘门极双极性晶体管)的高速开关特性和GTO (门极关断品闸管)的高阻断电压和低导通损耗特性于一体，一 般触发信号通过光纤传输到GCT单元。

在ACS6000的有缘整流单元的相模块里，每相模块由IGCT和二极管、钳位电容组成，由独立的门极供电单元GUSP其提供能源。

IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with gate drivers in a low inductance manner on the periphery. It combines the stable turn-off ability of transistors and the advantages of low on state losses of thyristors, and utilizes the performance of thyristors during the conduction phase. The turn-off phase exhibits the characteristics of transistors. IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, low conduction loss, and low manufacturing cost, high yield, and has good application prospects.

The medium power I industry drive device (5MW) IGCT, which has been used in the power system grid device (100MVA) and the medium power I industry drive device, has been successfully applied in the field of medium voltage frequency converters for 11 years (until 2009). Due to the high-speed switching ability of IGCT without the need for buffer circuits, the required number of power components is fewer,

The reliability of operation has greatly increased. IGCT integrates the high-speed switching characteristics of IGBT (Insulated Gate Bipolar Transistor) and the high blocking voltage and low conduction loss characteristics of GTO (Gate Turnoff Thyristor). Generally, trigger signals are transmitted to GCT units through optical fibers.

In the phase module of the edge rectifier unit of ACS6000, each phase module is composed of IGCT, diode, and clamp capacitor, and is powered by an independent gate power supply unit GUSP.