5SHX1060H0003 IGCT模块 雄霸厦门为您服务

IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起， 再与其门极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和晶闸

管低通态损耗的优点，

在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特

点，而且造成本低，成品率高，有很好的应用前景。

己用于电力系统电网装置(100MVA) 和的中功率工业驱动装置(5MW)IGCT在中压变频器领域内成功的应用了11年的时间(到09年为止)， 由于

IGCT的高速开关能力无需缓冲电路，因而所需的功率元件数目更少,

运行的可靠性大大增高。IGCT集 IGBT (绝缘门极双极性晶体管)的高速开关特性和GTO (门极关断品闸管)的高阻断电压和低导通损耗特性于一

体，一般触发信号通过光纤传输到IGCT单元。

在ACS6000的有缘整流单元的相模块里，每相模块由IGCT 和二极管、钳位电容组成，由独立的门极供电单元GUSP为其提供能源。

IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with gate drivers in a low inductance manner on the periphery, combining the stable turn-off ability of transistors and thyristors

The advantages of low pass state losses in tubes,

In the conduction phase, the performance of thyristors is utilized, while in the off phase, the characteristics of transistors are presented. IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, and low conduction loss

Moreover, the manufacturing cost is low, the yield is high, and there is a good application prospect.

IGCT has been successfully applied in the field of medium voltage frequency converters for 11 years (until 2009), which has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW)

The high-speed switching capability of IGCT does not require buffering circuits, thus requiring fewer power components,

The reliability of operation has greatly increased. IGCT combines the high-speed switching characteristics of IGBT (insulated gate bipolar transistor) with the high blocking voltage and low conduction loss characteristics of GTO (gate turn-off thyristor)

The trigger signal is generally transmitted to the IGCT unit through optical fibers.

In the phase module of the edge rectifier unit of ACS6000, each phase module is composed of IGCT, diode, and clamp capacitor, and is powered by an independent gate power supply unit GUSP.