5SHX08F4502 高压变频器

5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01低压IGBT和高压IGBT用于高压变频器。Igbts具 有快速开关性能，但在高压频率转换中电导率损耗高，诅需要许多IGBT复合串联在一起。对于低压IGBT,高压IGBT系列的数量相对较少,但导电损耗较高。元件总数的增加降低了变频器的可靠性，增加了机柜的尺寸并增加了成本。因此，在IGBT和GTO成熟技术的基础上，高电压大电流变频调速器采用简单的方案 ——IGC。 这种优化技术涉及重新设计GTO以使其成为重大的设计突破。5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01新型IGCT引入了快速，平衡的换向和内置的低损耗，5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01的主要设计特点包括用于快速漏极流的可靠阳极设计，用于快速开关的低损耗薄硅晶圆，以及使用高功率半导体的集成栅极驱动器

5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01 Low voltage IGBT and high voltage IGBT are used for high-voltage frequency converters. Igbts have fast switching performance, but their high conductivity loss in high-voltage frequency conversion requires many IGBT composites to be connected in series. For low-voltage IGBT, the number of high-voltage IGBT series is relatively small, but the conductivity loss is relatively high. The increase in the total number of components reduces the reliability of the frequency converter, increases the size of the cabinet, and increases costs. Therefore, on the basis of mature IGBT and GTO technologies, a simple solution - IGC - is adopted for high voltage and high current variable frequency governors. This optimization technique involves redesigning GTO to make it a major design breakthrough. The new IGCT 5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01 introduces fast, balanced commutation and built-in low loss. The main design features of 5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01 include reliable anode design for fast drain current, low loss thin silicon wafers for fast switching, and integrated gate drivers using high-power semiconductors