5SHY3545L0020-3BHE014105R0001 ABB 电力半导体器件

5SHY3545L0020-3BHE014105R0001 lGCT模块提供精确控制

5SHY3545L0020-3BHE014105R0001 IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50%，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.

新型电力半导体器件有IGBT、IGCT、SGCT、MOSFET、Power IC、Diode、Transistor等。

这些器件在新能源汽车、光伏发电、消费电子、工业控制、智能电网、轨道交通等领域得到广泛应用，发挥重要作用。

这些器件的实验结果有很多，比如：

IGBT的驱动和保护进行分析，得出栅极串联电阻和驱动电路内阻抗对IGBT的开通过程及驱动脉冲的波形有很大影响。

在大电感负载下，IGBT的开关时间不能太短，以限制出di/dt形成的尖峰电压，确保IGBT的安全。

由于IGBT在电力电子设备中多用于高压场合，故驱动电路与控制电路在电位上应严格隔离，驱动电路与IGBT的连线要尽量短。

IGBT的栅极驱动电路应尽可能简单实用，最好自身带有对IGBT的保护功能，有较强的抗干扰能力。

在实际应用中，为达到更好的效果，在过流保护上还需采用如软关断、降栅压等方法；采用钳位电路防止产生浪涌电压等。

5SHY3545L0020-3BHE014105R0001 IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点，而且造成本低，成品率高，有很好的应用前景。采用晶闸管技术的GTO是常用的大功率开关器件，它相对于采用晶体管技术的IGBT在截止电压上有更高的性能，5SHY3545L0020 3BHE014105R0001但广泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元，因而造成可靠性下降，价格较高，也不利于串联。但是,在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频交流器的优选方案。

5SHY3545L0020-3BHE014105R0001 ABB 电力半导体器件

5SHY3545L0020-3BHE014105R0001 lGCT module provides precise control

5SHY3545L0020-3BHE014105R0001 IGCT(Intergrated Gate Commutated Thyristors) is a new type of power semiconductor device used in large power electronics kits introduced in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination.

New Power semiconductor devices include IGBT, IGCT, SGCT, MOSFET, Power IC, Diode, Transistor and so on.

These devices are widely used in new energy vehicles, photovoltaic power generation, consumer electronics, industrial control, smart grid, rail transit and other fields, and play an important role.

There are many experimental results of these devices, such as:

The analysis of the driving and protection of IGBT shows that the grid series resistance and the impedance in the driving circuit have great influence on the opening process of IGBT and the waveform of the driving pulse.

Under large inductance load, the switching time of IGBT can not be too short to limit the peak voltage formed by di/dt and ensure the safety of IGBT.

Because IGBT is mostly used in high-voltage situations in power electronic equipment, the drive circuit and the control circuit should be strictly isolated on the potential, and the connection between the drive circuit and IGBT should be as short as possible.

The gate drive circuit of IGBT should be as simple and practical as possible, and it is best to have its own protection function for IGBT and strong anti-interference ability.

In practical application, in order to achieve better results, such as soft shutdown, grid voltage reduction and other methods should be used in overcurrent protection; Clamp circuit is used to prevent the generation of surge voltage.

5SHY3545L0020-3BHE014105R0001 IGCT has made great progress in terms of power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets of devices. IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, giving play to the performance of the thyristor in the on-stage, and presenting the characteristics of the transistor in the off stage. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cut-off voltage than IGBT using transistor technology, 5SHY3545L0020 3BHE014105R0001, but the widely used standard GTO drive technology causes uneven turn-on and turn-off process. The need for high cost dv/dt and di/dt absorption circuits and higher power grid drive units, resulting in reduced reliability, higher prices, and is not conducive to series. However, before the high-power MCT technology is not mature, IGCT has become the preferred solution for high-voltage high-power low-frequency communicators.