GV C705 AE01 3BHB045668R0004 电流流到其栅极 ABB 栅极电荷

概述：

GV C705 AE01 3BHB045668R0004开启期间，电流流到其栅极，对栅源电容和栅漏电容充电。显示了栅极电荷的测试电路。显示了对栅极端子施加恒定电流时获得的栅源电压随时间变化的曲线。由于栅电流恒定，可将时间乘以恒定栅电流IG，以栅极电荷Qg表示时间轴。（栅极电荷的计算公式是Qg＝IG×t。）

GV C705 AE01 3BHB045668R0004 技术在数字和功率应用领域的普及 得益于 它与双极结晶体管相比所具有的两个主要优势。其中一

个优势是，GV C705 AE01 3BHB045668R0004 器件在高频开关应用中使用 应用非常重要。GV C705 AE01 3BHB045668R0004 晶体管更加容易驱动，因为其控

制电极与导电器件隔离，所以不需要连续的导通电流。一旦 GV C705 AE01 3BHB045668R0004 晶体管开通，它的驱动电流几乎为

零。而且，控制电荷大量减少，GV C705 AE01 3BHB045668R0004 晶体管的存储时间也相应大幅减少。这基本上消除了导通压降和

关断时间之间的设计权衡问题，而开通状态压降与控制电荷成反比。因此，与双极器件相比，GV C705 AE01 3BHB045668R0004 技

术预示着使用更简单且更高效的驱动电路带来显著的经济效益。

此外，需要特别强调突出的是，在电源 应用中，GV C705 AE01 3BHB045668R0004 具有电阻的性质。GV C705 AE01 3BHB045668R0004 漏源端上的压降是流

入半导体的电流的线性函数。此线性关系用 GV C705 AE01 3BHB045668R0004 的 RDS(on) 来表征，也称为导通电阻。导通电阻对指定

栅源极电压和器件温度来说是恒定的。与 p-n 结 -2.2mV/°C 的温度系数不同，GV C705 AE01 3BHB045668R0004 的温度系数为正

值，约为 0.7%/°C 至 1%/°C。正因为 GV C705 AE01 3BHB045668R0004 具有此正温度系数，所以当使用单个器件不现实或不可能

时，它便是高功率 应用中 并行运行的理想之选。由于通道电阻具有正 TC，因此多个并联 GV C705 AE01 3BHB045668R0004 会均匀

地分配电流。在多个 GV C705 AE01 3BHB045668R0004 上会自动实现电流共享，因为正 TC 的作用相当于一种缓慢的负反馈系统。

载流更大的器件会产生更多热量 - 请别忘了漏源电压是相等的 – 并且温度升高会增加其 RDS(on) 值。增加电阻

会导致电流减小，从而降低温度。最终，当并联器件所承载的电流大小相近时，便达到平衡状态。RDS(on) 值

和不同结至环境热阻的初始容差可导致电流分布出现高达 30% 的重大误

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GV C705 AE01 3BHB045668R0004 电流流到其栅极 ABB 栅极电荷

GV C705 AE01 3BHB045668R0004 During opening, current flows to its gate, charging the gate source capacitance and gate leakage capacitance. Figure 1.5 shows the test circuit for the grid charge. Figure 1.6 shows the time curve of the gate-source voltage obtained when a constant current is applied to the gate terminal. Since the gate current is constant, the time can be multiplied by the constant gate current IG to represent the timeline with the gate charge Qg. (The grid charge is calculated by Qg = IG×t.)

The popularity of the GV C705 AE01 3BHB045668R0004 technology in digital and power applications is due to its two main advantages over bipolar junction transistors. One of

One advantage is that the GV C705 AE01 3BHB045668R0004 device is very important for use in high frequency switching applications. The GV C705 AE01 3BHB045668R0004 transistor is easier to drive because of its control

The electrode is isolated from the conducting device, so a continuous conduction current is not required. Once the GV C705 AE01 3BHB045668R0004 transistor is turned on, its drive current is almost

Zero. Moreover, the control charge is greatly reduced, and the storage time of the GV C705 AE01 3BHB045668R0004 transistor is also greatly reduced. This essentially eliminates the on-pressure drop and

The design tradeoff between the turn-off time is a problem, while the on-state voltage drop is inversely proportional to the control charge. Therefore, compared with bipolar devices, the GV C705 AE01 3BHB045668R0004 technology

The technology promises significant economic benefits from the use of simpler and more efficient drive circuits.

In addition, it is particularly important to highlight that in power applications, the GV C705 AE01 3BHB045668R0004 has the property of resistance. GV C705 AE01 3BHB045668R0004 The pressure drop on the drain and source end is a flow

A linear function of the current flowing into a semiconductor. This linear relationship is characterized by the RDS(on) of GV C705 AE01 3BHB045668R0004, also known as the on-resistance. On-resistance pair specifies

The gate-source voltage and device temperature are constant. Unlike the p-n junction, which has a temperature coefficient of -2.2mV/°C, GV C705 AE01 3BHB045668R0004 has a positive temperature coefficient

Values of about 0.7%/°C to 1%/°C. Because the GV C705 AE01 3BHB045668R0004 has this positive temperature coefficient, it is not practical or possible when using a single device

It is ideal for parallel operation in high power applications. Since the channel resistance has positive TC, multiple parallel GVS C705 AE01 3BHB045668R0004 are uniform

Ground distributes current. Current sharing is automatically implemented on multiple GV C705 AE01 3BHB045668R0004 because the positive TC acts as a slow negative feedback system.

Devices that carry more current generate more heat - remember that drain-source voltages are equal - and the increase in temperature increases their RDS(on) value. Increase resistance

It causes the current to decrease, which lowers the temperature. Finally, when the current carried by the parallel devices is similar, the equilibrium state is reached. RDS(on) value

Initial tolerances with different junction to ambient thermal resistance can lead to significant errors in current distribution of up to 30%

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GV C705 AE01 3BHB045668R0004 电流流到其栅极 ABB 栅极电荷