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GV C705 AE01 3BHB045647R0010 ABB 双极晶体管 栅极视为电容

双极晶体管和 GV C705 AE01 3BHB045647R0010 ABB 晶体管的工作原理相同。从根本上说,这两种晶体管都是电荷控制器件,这就意味

着它们的输出电流与控制电极在半导体中形成的电荷成比例。将这些器件用作开关时,都必须由能够提供足

够灌入和拉出电流的低阻抗源来驱动,以实现控制电荷的快速嵌入和脱出。


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GV C705 AE01 3BHB045647R0010 ABB  双极晶体管 栅极视为电容

GV C707 AE01 3BHB045647R0011.jpg

 

概述:

 

双极晶体管和 GV C705 AE01 3BHB045647R0010 ABB 晶体管的工作原理相同。从根本上说,这两种晶体管都是电荷控制器件,这就意味

着它们的输出电流与控制电极在半导体中形成的电荷成比例。将这些器件用作开关时,都必须由能够提供足

够灌入和拉出电流的低阻抗源来驱动,以实现控制电荷的快速嵌入和脱出。从这一点来看,在开关期

间,GV C705 AE01 3BHB045647R0010 ABB  必须以类似于双极晶体管的形式进行“硬”驱动,以实现可媲美的开关速度。从理论上来说,双

极晶体管和GV C705 AE01 3BHB045647R0010 ABB  器件的开关速度几乎相同,这取决于电荷载流子在半导体区域中传输所需的时间。功

率器件的典型值大约为 20 至 200 皮秒,具体取决于器件大小


有以下特点:


a、由于GV C705 AE01 3BHB045647R0010 ABB  是电压驱动器件,因此无直流电流流入栅极。


b、要开通GV C705 AE01 3BHB045647R0010 ABB ,必须对栅极施加高于额定栅极阈值电压Vth的电压。


c、处于稳态开启或关断状态时,栅极驱动基本无功耗。


d、通过驱动器输出看到的 栅源电容根据其内部状态而有所不同。



可将GV C705 AE01 3BHB045647R0010 ABB 栅极视为电容。除非对栅极输入电容充电,否则的GV C705 AE01 3BHB045647R0010 ABB 栅极电压不会增大,而且在栅极电压达到栅极阈值电压Vth之前,不会开通。的栅极阈值电压Vth是在其源极和漏极区域之间产生传导通道所需的最小栅偏压。


 

GV C705 AE01 3BHB045647R0010 ABB  双极晶体管 栅极视为电容

GV C707 AE01 3BHB045647R0011.jpg


 

The bipolar transistor works the same way as the GV C705 AE01 3BHB045647R0010 ABB transistor. Basically, both types of transistors are charge-controlled devices, which means

Their output current is proportional to the charge formed in the semiconductor by the control electrode. When these devices are used as switches, they must be supplied by a sufficient supply

Driven by a low impedance source sufficient to inject and pull current to achieve rapid insertion and removal of control charges. From this point of view, during the switch period

The GV C705 AE01 3BHB045647R0010 ABB must be "hard" driven in a form similar to a bipolar transistor to achieve comparable switching speeds. In theory, double

Polar transistors and GV C705 AE01 3BHB045647R0010 ABB devices switch at almost the same speed, depending on the time it takes for charge carriers to travel through the semiconductor region. work

Typical values for rate devices are approximately 20 to 200 picoseconds, depending on device size


It has the following characteristics:


A. Since the GV C705 AE01 3BHB045647R0010 ABB is a voltage driven device, no DC current flows into the gate.


B. To open GV C705 AE01 3BHB045647R0010 ABB, a voltage higher than the rated gate threshold voltage Vth must be applied to the grid.


c, in the steady state on or off state, the grid drive basically no power consumption.


d, the gate-source capacitance seen through the driver output varies according to its internal state.



The GV C705 AE01 3BHB045647R0010 ABB gate can be regarded as a capacitor. The GV C705 AE01 3BHB045647R0010 ABB gate voltage does not increase unless the gate input capacitor is charged, and it does not turn on until the gate voltage reaches the gate threshold voltage Vth. The gate threshold voltage Vth is the minimum gate bias required to create a conductive channel between its source and drain regions.


 

 

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GV C705 AE01 3BHB045647R0010 ABB  双极晶体管 栅极视为电容


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