GVC704AE01 3BHB045668R0003 ABB  栅极驱动与基极驱动 电压驱动器件

概述：

GVC704AE01 3BHB045668R0003 ABB 栅极驱动与基极驱动

常规的GVC704AE01 3BHB045668R0003 ABB 双极晶体管是电流驱动器件，是电压驱动器件。

为双极晶体管。要在集电极中产生电流，必须在基极端子和发射极端子之间施加电流。在栅极端子和源极端子之间施加电压时， 在漏极中产生电流。

GVC704AE01 3BHB045668R0003 ABB 的栅极是一层二氧化硅。由于该栅极与源极隔离，向栅极端子施加直流电压理论上不会在栅极中产生电流（在栅极充电和放电的瞬态产生的电流除外）。实践中，栅极中会产生几纳安的微弱电流。当栅极端子和源极端子之间无电压时，由于漏源极阻抗极高，因此漏极中除泄漏电流之外无电流。

如今，从微处理器到“分立式”功率晶

体管在内的各种现代电子组件均集成了数以百万计的 晶体管。

本报告重点介绍了各种开关模式功率转换应用中功率的栅极驱动 应用非常重要。

GVC704AE01 3BHB045668R0003 ABB  栅极驱动与基极驱动 电压驱动器件

GVC704AE01 3BHB045668R0003 ABB gate drive and base drive

The conventional GVC704AE01 3BHB045668R0003 ABB bipolar transistor is a current driven device, while the  is a voltage driven device.

It is a bipolar transistor. To generate a current in the collector, a current must be applied between the base terminal and the emitter terminal. Figure 1.2 shows a MOSFET, which produces a current in the drain when a voltage is applied between the gate terminal and the source pole.

The GVC704AE01 3BHB045668R0003 ABB's gate is a layer of silica. Since this gate is isolated from the source, applying a DC voltage to the gate terminal theoretically does not generate current in the gate (except for current generated during the transient state of charging and discharging the gate). In practice, a small current of several nanoamps is generated in the gate. When there is no voltage between the gate terminal and the source pole, there is no current in the drain except the leakage current due to the extremely high drain-source impedance.

Today, from microprocessors to "discrete" power crystals

A variety of modern electronic components, including body tubes, are integrated with millions of MOSFET transistors.

This report highlights the importance of gate drive applications for power MOSFETs in various switching mode power conversion applications.

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