GV C704 AE01 3BHB045647R0009 ABB  半桥驱动器 半桥的开关节点为基准

概述：

主要特点

■半桥驱动器

-驱动四个外部N沟道MOSFET

-支持100%脉宽调制(PWM)占空比

■工作电源电压范围: 5.5V 至45V

■三个控制模式

-PH/EN、独立半桥和PWM

■于配置的串行接口

GV C704 AE01 3BHB045647R0009半桥驱动器旨在驱动以半桥配置堆叠在一起的功率晶体管。它们有两个通道：低侧和高侧。低侧是一个相当简单的缓冲器，通常与控制输入具有相同的接地点。而高侧则是经过精心设计且以半桥的开关节点为基准，从而允许使用两个N沟道MOSFET或两个IGBT。开关节点应该在高电压总线和电源接地之间快速过渡，从而让我们有机会以具有成本效益的方式利用与为低侧供电时相同的电源通过自举电路为高侧供电。为了传达输出应为高电平还是低电平，必须包含一个高电压电平转换器，该转换器的泄漏电流通常较小，只有几微安或更小。

GV C704 AE01 3BHB045647R0009 ABB  半桥驱动器 半桥的开关节点为基准

Main feature

■ Half-bridge driver

- Drives four external n-channel MOSFETs

- Supports 100% pulse width modulation (PWM) duty cycle

■ Power supply voltage range: 5.5V to 45V

■ Three control modes

-PH/EN, independent half-bridge and PWM

■ Serial interface in configuration

The GV C704 AE01 3BHB045647R0009 Half-bridge driver is designed to drive power transistors stacked together in a half-bridge configuration. They have two channels: the low side and the high side. The low side is a fairly simple buffer that usually has the same ground point as the control input. The high side is carefully designed and benchmarked against a half-bridge switch node, allowing the use of two n-channel MOSFETs or two IGBTs. The switching node should make a quick transition between the high voltage bus and the power ground, giving us the opportunity to power the high side via a bootstrap circuit in a cost-effective manner using the same power supply as when powering the low side. In order to communicate whether the output should be high or low, a high voltage level converter must be included, and the leakage current of the converter is usually small, only a few microamps or less.

GV C704 AE01 3BHB045647R0009 ABB  半桥驱动器 半桥的开关节点为基准

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保修期：12个月！

包装：原包装用纸箱。

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