ABB 5SHY5055L0002 3BHE019719R0101 GVC736BE101 控制系统
观察到阳极(A)相对于阴极(K)为负。这个
大门一直开着。SCR中有三个PN结:J1、J2和J3。由于此反向
则结J1和J3也被反向偏置。并且结J2是正向偏置的。可控硅
由于这种反向偏置而不导通。一个非常小的电流从阴极流到阳极。
这个电流被称为可控硅的反向泄漏电流。这种模式被称为反向
阻塞模式。
SCR的V-I特性的上图显示了SCR的反向特性
阻塞模式。
观察反向电压增加,但电流非常小。反向故障时
反向电流迅速增加。在反向击穿时
晶闸管两端存在高电压,大电流流过晶闸管。因此功率大
在晶闸管中发生耗散。由于这种耗散,结温度
超过允许值并且SCR损坏。因此
SCR不应超过VBR。
在反向阻断模式期间,不应施加正栅极信号。如果
正信号被施加在栅极和阴极之间,结J3被正向偏置。因此
电流开始流过它。这个电流增加了可控硅的反向漏电流。
因此,耗散也增加了。
ABB 5SHY5055L0002 3BHE019719R0101 GVC736BE101 控制系统
The anode (A) is observed to be negative with respect to the cathode (K). this
The gate remained open. There are three PN junctions in SCR: J1, J2, and J3. Due to this reverse
Junctions J1 and J3 are also reverse-biased. And the junction J2 is forward-biased. thyristor
It does not conduct due to this reverse bias. A very small current flows from the cathode to the anode.
This current is called the reverse leakage current of the thyristor. This pattern is called reverse
Blocking mode.
The above diagram of the V-I characteristics of the SCR shows the reverse characteristics of the SCR
Blocking mode.
The reverse voltage is observed to increase, but the current is very small. Reverse failure time
The reverse current increases rapidly. During the reverse breakdown
There is high voltage at both ends of the thyristor, and large current flows through the thyristor. So high power
Dissipation occurs in the thyristor. Due to this dissipation, the junction temperature
The allowed value is exceeded and the SCR is damaged. therefore
The SCR should not exceed the VBR.
The positive grid signal should not be applied during the reverse block mode. if
A positive signal is applied between the grid and cathode, and junction J3 is positively biased. therefore
Electricity begins to flow through it. This current increases the reverse leakage current of the thyristor.
As a result, dissipation also increases.
ABB 5SHY5055L0002 3BHE019719R0101 GVC736BE101 控制系统
Harmony/ INFI 90,安全系统
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