ABB SCYC51010 58052515G 电源模块

ABB SCYC51010 58052515G 电源模块

SCYC51010 58052515G随着的商业化功率MOSFETs在20世纪70年代，B.贾扬特·巴利加在提交了一份专利披露通用电气(通用电气)在1977年描述一个功率半导体器件具有IGBT操作模式，包括MOS选通关于半导体闸流管，一个四层VMOS(V形槽MOSFET)结构，以及使用MOS栅控结构来控制四层半导体器件。他开始说制造IGBT装置在通用电气公司的Margaret Lazeri的协助下于1978年问世，并于1979年成功完成了该项目。[4]实验结果于1979年发表。[5][6]该器件结构在本文中被称为“漏极区被p型阳极区代替的V型槽MOSFET器件”，随后被称为“绝缘栅整流器”(IGR)，[7]绝缘栅晶体管(IGT)，[8]电导率调制场效应晶体管(COMFET)[9]和“双极型MOSFET”。 SCYC51010 58052515G单元的结构类似于n沟道垂直结构功率MOSFET除了用p+集电极层代替n+漏极，从而形成垂直PNP双极结晶体管。这个额外的p+区域产生了PNP双极结晶体管与表面n沟道的级联连接金属氧化物半导体场效应晶体管。

ABB SCYC51010 58052515G 电源模块

SCYC51010 58052515G With the commercialization of power MOSFETs in the 1970s, B Jayant Baliga filed a patent disclosure. In 1977, General Electric described that a power semiconductor device had IGBT operation mode, including MOS gating about thyristor, a four-layer VMOS(V-groove MOSFET) structure, and the use of MOS gate control structure to control the four-layer semiconductor device. He began to say that the IGBT device was produced in 1978 with the assistance of Margaret Lazeri of General Electric Company, and the project was successfully completed in 1979. [4] The experimental results were published in 1979. [5][6] This device structure is called "V-groove MOSFET device with drain region replaced by P-type anode region" in this paper, followed by "insulated gate rectifier" (IGR), [7] insulated gate transistor (IGT), [8] conductivity modulation field effect transistor (COMFET)[9] and "bipolar MOSFET". The structure of SCYC51010 58052515G cell is similar to that of N-channel vertical power MOSFET except that the n+ drain is replaced by the p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This extra p+ region produces a cascade connection of PNP bipolar junction transistor and surface N-channel metal oxide semiconductor field effect transistor.

ABB SCYC51010 58052515G 电源模块