3BHE039724R0C3D PPD513AOC-100440  |  集成栅极换向晶体管 |  3BHL000986P0006 

型号：3BHE039724R0C3D PPD513AOC-100440

类别：集成栅极换向晶体管-

成色：全新/非全新

货期：现货

质保：一年

快递：顺丰/德邦

集成栅极换向晶体管（IGCT，全称Intergrated Gate Commutated Thyristors）是一种在1996年问世的新型电力半导体器件，特别适用于巨型电力电子成套装置。以下是关于IGCT的详细解析：

结构与技术特点：

IGCT基于GTO（Gate Turn-Off Thyristor，门极可关断晶闸管）结构，利用集成栅极结构进行栅极硬驱动。

采用了缓冲层结构及阳极透明发射极技术，实现了动态损耗的显著降低，大约降低了50%。

在一个芯片上集成了具有良好动态特性的续流二极管，结合了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性。

3BHE039724R0C3D PPD513AOC-100440 IGCT具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点。

由于其独特的设计和制造工艺，IGCT在导通阶段表现出晶闸管的性能，而在关断阶段则呈现晶体管的特性。

3BHE039724R0C3D PPD513AOC-100440 IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，为电力电子成套装置带来了新的飞跃。

应用与前景：

3BHE039724R0C3D PPD513AOC-100440 IGCT在电力电子领域具有广泛的应用前景，特别是在需要高功率、高效率和高可靠性的电力转换和控制系统中。

随着技术的不断进步和成本的降低，IGCT有望在未来得到更广泛的应用，为能源转换、智能电网、电动汽车等领域的发展提供有力支持。

3BHE039724R0C3D PPD513AOC-100440 | Integrated gate commutator transistor | 3BHL000986P0006

Model: 3BHE039724R0C3D PPD513AOC-100440

Category: Integrated gate commutator transistor -

Finish: New/not new

Delivery time: from stock

Warranty: One year

Express: SF Express/Debon

Intergrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device introduced in 1996, which is especially suitable for large power electronics packages. The following is a detailed analysis of IGCT:

Structure and technical features:

IGCT is based on GTO (Gate Turn-Off Thyristor, gate turn-off thyristor) structure, and uses integrated gate structure for gate hard drive.

The buffer layer structure and transparent anode emitter technology are adopted to achieve a significant reduction in dynamic loss, about 50%.

A continuous current diode with good dynamic characteristics is integrated on a chip, which combines the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of thyristor.

Performance advantage:

3BHE039724R0C3D PPD513AOC-100440 IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure and low loss.

Due to its unique design and manufacturing process, IGCT exhibits the performance of a thyristor during the on phase and a transistor during the off phase.

3BHE039724R0C3D PPD513AOC-100440 IGCT has made great progress in terms of power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap for power electronics complete sets of devices.

Application and prospect:

3BHE039724R0C3D PPD513AOC-100440 IGCT has a wide range of applications in the field of power electronics, especially in power conversion and control systems requiring high power, high efficiency and high reliability.

With the continuous progress of technology and cost reduction, IGCT is expected to be more widely used in the future, providing strong support for the development of energy conversion, smart grid, electric vehicles and other fields.