ABB 5SHY3545L0014 可控硅控制单元

半导体的出现成为20世纪现代物理学其中-项最重大的突破,标志着电子技术的诞生。而由于不同领域的实际需要，促使半导体器件自此分别向两个分支快速发展，其中-个分支即是以集成电路为代表的微电子器件，特点为小功率、集成化，作为信息的检出、传送和处理的工具;而另-类就是电力电子器件，特点为大功率、快速化。1955年,美国通用电气公司发表了世界上第一个以硅单晶为半导体整流材料的硅整流器(SR) ，1957年又发表了全球首个用于功率转换和控制的可控硅整流器(SCR) 。由于它们具有体积小、量轻、效率高、寿命长的优势,尤其是SCR能以微小的电流控制较大的功率，让半导体电力电子器件成功从弱电控制领域进入了强电控制领域、大功率控制领域。在整流器的应用.上，晶闸管迅速取代了水银整流器(引燃管)，使得整流器固体化、静止化和无触点化,并显著的节省能源。从1960年代开始,由普通晶闸管相继衍生出了快速晶闸管、光控晶闸管、不对称晶闸管及双向晶闸管等各种特性的晶闸管，形成-一个庞大的晶闸管家族。

The emergence of semiconductors became one of the most significant breakthroughs in modern physics in the 20th century, marking the birth of electronic technology. Due to the practical needs of different fields, semiconductor devices have rapidly developed into two branches, one of which is microelectronic devices represented by integrated circuits, characterized by low power and integration, serving as tools for information detection, transmission, and processing; Another type is power electronic devices, characterized by high power and speed. In 1955, General Electric Company of the United States published the world's first silicon rectifier (SR) using silicon single crystal as a semiconductor rectifier material, and in 1957, it also published the world's first controllable silicon rectifier (SCR) for power conversion and control. Due to their advantages of small size, light weight, high efficiency, and long lifespan, especially the ability of SCR to control large power with small currents, semiconductor power electronic devices have successfully entered the fields of strong current control and high power control from the field of weak current control. In the application of rectifiers, thyristors quickly replaced mercury rectifiers (pilot tubes), making the rectifiers solid, stationary, and contactless, and significantly saving energy. Since the 1960s, various characteristic thyristors such as fast thyristors, photo controlled thyristors, asymmetric thyristors, and bidirectional thyristors have been derived from ordinary thyristors, forming a huge family of thyristors