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5SHX06F6004-3BHB003387R0101 IGCT模块 通态损耗低、可靠性高等优点

5SHX06F6004-3BHB003387R0101 IGCT模块在整流环节中与SCR一脉相承,SCR是可控硅整流器的简称。可控硅有单向、双向、可关断和光控几种类型。IGCT模块具有阻断电压高、容量大、通态损耗低、可靠性高等优点,被广泛用于可控整流、调压、逆变以及无触点开关等各种自动控制和大功率的电能转换的场合。它还可以应用于直流电网中,作为高压大容量功率变换领域的开关器件。

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5SHX06F6004-3BHB003387R0101 IGCT模块 通态损耗低、可靠性高等优点

5SHX06F6004-3BHB003387R0101-5SXE05-0151-3BHB003151P104-(1).jpg

IGCT模块是集成门极换流晶闸管(IntergratedGateCommutatedThyristors)的简称,它是一种多芯片、多点电压测量装置,能够测量电压的连续变化和时间的变化,而且可以存储数据。IGCT模块是IGBT技术的一个重要分支,具有体积小、重量轻、效率高、寿命长、控制方便等优点。它是在GTO(门极可关断晶闸管)技术的基础上发展起来的新型电力电子器件,通过将GTO芯片与反并联二极管和门极驱动电路集成在一起,再与其门极驱动器在外围以低电感方式连接而成。


5SHX06F6004-3BHB003387R0101 IGCT模块在整流环节中与SCR一脉相承,SCR是可控硅整流器的简称。可控硅有单向、双向、可关断和光控几种类型。IGCT模块具有阻断电压高、容量大、通态损耗低、可靠性高等优点,被广泛用于可控整流、调压、逆变以及无触点开关等各种自动控制和大功率的电能转换的场合。它还可以应用于直流电网中,作为高压大容量功率变换领域的开关器件。


5SHX06F6004-3BHB003387R0101 IGCT模块的特点是具有输出触发脉冲的极高的对称性及稳定性,且不随环境温度变化,使用中不需要对脉冲对称度及限位进行调整,现场调试一般不需要示波器即可完成。


5SHX06F6004-3BHB003387R0101 IGCT模块的阻断电压高的优势主要体现在以下几个方面:


可靠性高:由于IGCT模块的阻断电压高,可以在高压大容量功率变换领域安全、可靠、经济、高效地应用。其高速开关能力无需缓冲电路,所需功率元件数目更少,运行可靠性大大提高。

损耗低:5SHX06F6004-3BHB003387R0101 IGCT模块的损耗低,通态压降小,通态损耗小,具有导通能力强、通态压降低的突出优点,特别适合高压大功率变频装置。

开关速度快:5SHX06F6004-3BHB003387R0101 IGCT模块采用去“GTO区”技术,即在阴极NPN晶体管完全停止注入电荷之前,整个阳极电流由阴极迅速转向门极,极大地加快了关断过程。因此,其开关速度比普通GTO快10倍。

容量密度大:由于IGCT模块的阻断电压高,其容量密度也相应增大,可以应用于更大容量的电力变换系统。

应用范围广:5SHX06F6004-3BHB003387R0101 IGCT模块可以应用于工业变频调速、风电并网、轨道交通等领域,具有广泛的应用前景。

综上所述,5SHX06F6004-3BHB003387R0101 IGCT模块的阻断电压高为其带来了可靠性高、损耗低、开关速度快、容量密度大、应用范围广等优势。

5SHX06F6004-3BHB003387R0101 IGCT模块 通态损耗低、可靠性高等优点

5SHX06F6004-3BHB003387R0101-5SXE05-0151-3BHB003151P104-(1).jpg

IGCT module is integrated gate converter thyristor (IntergratedGateCommutatedThyristors) abbreviation, it is a kind of more chips, multipoint voltage measuring device, to measure the voltage of the continuous changes and the change of time, and can store data. IGCT module is an important branch of IGBT technology, which has the advantages of small size, light weight, high efficiency, long life and easy control. It is a new type of power electronic device developed on the basis of GTO (gate turn-off thyristor) technology, by integrating the GTO chip with the anti-parallel diode and the gate driver circuit, and then connected with the gate driver in the peripheral with low inductance.


5SHX06F6004-3BHB003387R0101 IGCT module is in the same line as SCR in the rectification link, SCR is short for thyristor rectifier. Thyristors have one-way, two-way, turn-off and light control several types. IGCT module has the advantages of high blocking voltage, large capacity, low on-state loss and high reliability, and is widely used in various automatic control and high-power power conversion occasions such as controlled rectifier, voltage regulation, inverter and contactless switch. It can also be used in DC power grid as a switching device in the field of high-voltage and large-capacity power conversion.


5SHX06F6004-3BHB003387R0101 IGCT module is characterized by high symmetry and stability of the output trigger pulse, and does not change with the ambient temperature, and does not need to adjust the pulse symmetry and limit in use, field debugging generally does not need oscilloscope to complete.


5SHX06F6004-3BHB003387R0101 The advantages of high blocking voltage of IGCT module are mainly reflected in the following aspects:


High reliability: Due to the high blocking voltage of IGCT module, it can be used safely, reliably, economically and efficiently in the field of high-voltage and large-capacity power conversion. Its high-speed switching capability does not require buffer circuits, the number of power components required is less, and the operation reliability is greatly improved.

Low loss: 5SHX06F6004-3BHB003387R0101 IGCT module has low loss, small on-state pressure drop, and small on-state loss. It has the outstanding advantages of strong on-state voltage reduction and strong on-state voltage reduction, especially suitable for high voltage and high power frequency conversion devices.

Fast switching speed: The 5SHX06F6004-3BHB003387R0101 IGCT module uses de-" GTO zone "technology, that is, before the cathode NPN transistor completely stops injecting charge, the entire anode current quickly shifts from the cathode to the gate, greatly speeding up the shutdown process. As a result, its switching speed is 10 times faster than that of an ordinary GTO.

High capacity density: Due to the high blocking voltage of IGCT module, its capacity density is correspondingly increased, which can be applied to larger capacity power conversion systems.

Wide application range: 5SHX06F6004-3BHB003387R0101 IGCT module can be used in industrial frequency control, wind power grid connection, rail transit and other fields, has a wide range of application prospects.

In summary, the high blocking voltage of the 5SHX06F6004-3BHB003387R0101 IGCT module brings advantages such as high reliability, low loss, fast switching speed, large capacity density, and wide application range.

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